Date of Guest Lecture: 20 June 2023
The topic of the Guest Lecture: Development and RF characterization of Indigenous GaN devices.
Guest Speaker: Dr. S. K Tomar
Designation: Scientist-F, GaN Division, Solid State Physics Laboratory, DRDO, Ministry. Of Defence, Delhi
Participants: B.Tech Second Year Students & Faculty Members of the ECE Department.

The guest lecture on “Development and RF Characterization of Indigenous GaN Devices" was held at AKGEC on 20 June 2023. The lecture aimed to provide attendees with insights into the development and radio frequency (RF) characterization of Gallium Nitride (GaN) devices. GaN has emerged as a promising material for various applications in the field of electronics due to its superior properties and performance.

The lecture was delivered by Dr. S. K Tomar, Scientist-F, GaN Division, Solid State Physics Laboratory, DRDO, Ministry. Of Defence, Delhi. Dr. Tomar has extensive experience in GaN-based technology and has made significant contributions to the development and RF characterization of indigenous GaN devices. The speaker’s expertise ensured a comprehensive and insightful session for the attendees.

Key Points Covered:

The lecture began with an overview of GaN technology, highlighting its unique properties such as high electron mobility, high breakdown voltage, and wide bandgap. These properties make GaN an ideal material for high-frequency and high-power applications.

The speaker discussed the challenges and advancements in the development of indigenous GaN devices. This included the fabrication techniques, material growth methods, and device design considerations. The audience gained insights into the various processes involved in manufacturing GaN devices and the benefits of indigenous development.

Attendees were provided with valuable insights into techniques for optimizing the performance of GaN devices. This included discussions on device modeling, load-pull techniques, and impedance matching for achieving maximum power output and efficiency.

The lecture concluded with an exploration of the wide range of applications for GaN devices, including wireless communication systems, radar systems, power amplifiers, and more. The speaker also shared insights into the future trends and potential advancements in GaN technology.

The lecture encouraged active participation from the audience, allowing for an engaging and interactive session. Attendees had the opportunity to ask questions and seek clarifications on specific aspects of GaN device development and RF characterization.
Overall, the lecture served as a valuable platform for disseminating knowledge and fostering a deeper understanding of GaN devices, contributing to the growth and development of indigenous GaN technology.